Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 101-104
- https://doi.org/10.1109/gaas.1995.528971
Abstract
A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.Keywords
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