Epitaxial growth of Al/GaAlAs films on (100) GaAs by hot vacuum deposition
- 1 February 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 1139-1141
- https://doi.org/10.1063/1.326052
Abstract
Epitaxial growth of (100) GaAlAs and Al was achieved on (100) n‐GaAs substrates using vacuum deposition in an ultrahigh vacuum system. In situ Auger electron analysis, microspot Auger electrospectroscopy, LEED, and reflection electron diffraction was used to characterize the films. Regions of GaAlAs and Al were identified. Electrical measurements indicated the presence of a stable Schottky barrier with a barrier height of 0.76 eV.This publication has 9 references indexed in Scilit:
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