Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature
- 28 July 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (4) , 425-427
- https://doi.org/10.1063/1.119568
Abstract
We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at room temperature was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface.Keywords
This publication has 17 references indexed in Scilit:
- Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetimeApplied Physics Letters, 1997
- Time-resolved photoluminescence studies of InGaN epilayersApplied Physics Letters, 1996
- Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) SiApplied Physics Letters, 1996
- Radiative recombination lifetime measurements of InGaN single quantum wellApplied Physics Letters, 1996
- Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layerApplied Physics Letters, 1996
- Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- High-power InGaN single-quantum-well-structure blue and violet light-emitting diodesApplied Physics Letters, 1995
- Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diodeApplied Physics Letters, 1995
- Exciton lifetimes in GaN and GaInNApplied Physics Letters, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995