Selective nucleation of silicon clusters in CVD
- 1 July 1992
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 7 (7) , 1809-1815
- https://doi.org/10.1557/jmr.1992.1809
Abstract
A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH2Cl2/HCl/H2.Keywords
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