Characterization of the interface of ZnSe-ZnS strained-layer superlattices by MeV transmission electron microscopy and ion-channeling
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1-4) , 603-606
- https://doi.org/10.1016/0168-583x(88)90640-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Channeling analysis of strain in superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Strain measurements by channeling angular scansApplied Physics Letters, 1983
- Ion channeling studies of InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Mechanism of ion dechanneling in compound semiconductor superlatticesApplied Physics Letters, 1982
- Ion backscattering and channeling study of InAs-GaSb superlatticesApplied Physics Letters, 1980
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975