Reflection X-ray topography of oxidation-induced stacking faults in silicon
- 16 August 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 42 (2) , K91-K93
- https://doi.org/10.1002/pssa.2210420247
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Oxidation stacking faults in epitaxial silicon crystalsJournal of Materials Science, 1975
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society, 1973
- The influence of stacking faults on leakage currents of FET devicesMicroelectronics Reliability, 1971