Oxidation stacking faults in epitaxial silicon crystals
- 1 April 1975
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 10 (4) , 705-713
- https://doi.org/10.1007/bf00566580
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society, 1973
- Stacking faults in (100) epitaxial silicon caused by HF and thermal oxidation and effects on p-n junctionsJournal of Applied Physics, 1972
- Generation of Stacking Faults and Dislocation Loops in Silicon WafersJournal of Applied Physics, 1972
- Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized SiliconJournal of Applied Physics, 1971
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Stacking Faults in Annealed Silicon SurfacesJournal of Applied Physics, 1969
- Diffusion Pipes in Silicon NPN StructuresJournal of the Electrochemical Society, 1969
- Fault Planes in Steam-Oxidized SiliconJournal of Applied Physics, 1965
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964
- Microplasma breakdown at stair-rod dislocations in siliconPhilosophical Magazine, 1963