Semiconductor thickness effects in the double-gate SOI MOSFET
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (5) , 1127-1134
- https://doi.org/10.1109/16.669563
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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