Electrical conduction in low temperature grown InP
- 21 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3315-3317
- https://doi.org/10.1063/1.109056
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Deep center photoluminescence study of low-temperature InP grown by molecular beam epitaxyApplied Physics Letters, 1992
- Low-temperature ac conductivity of adiabatic small-polaronic hopping in disordered systemsPhysical Review B, 1992
- High-resistivity GaAs grown by high-temperature molecular-beam epitaxyJournal of Applied Physics, 1992
- Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperatureApplied Physics Letters, 1992
- Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam EpitaxyMRS Proceedings, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Polarons in crystalline and non-crystalline materialsAdvances in Physics, 1969