Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure
- 15 September 1994
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (6) , 3917-3919
- https://doi.org/10.1063/1.357401
Abstract
Size effects in field‐effect induced wires imposed upon a high‐mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well‐pronounced peak at magnetic fields <0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.This publication has 9 references indexed in Scilit:
- Systematics of electron mobility in Si/SiGe heterostructuresApplied Physics Letters, 1993
- Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Fabrication of high mobility two-dimensional electron and hole gases in GeSi/SiJournal of Applied Physics, 1993
- Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/ heterostructuresPhysical Review B, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- Boundary scattering in quantum wiresPhysical Review Letters, 1989
- Density of states in a two-dimensional electron gas in the presence of a one-dimensional superlattice potentialPhysical Review B, 1989
- Characterization of very narrow quasi-one-dimensional quantum channelsPhysical Review B, 1988