Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for high dielectric applications
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1137-1141
- https://doi.org/10.1116/1.590022
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Pt/TiN electrodes for stacked memory with polysilicon plug utilizing PZT filmsIntegrated Ferroelectrics, 1996
- Origin of Dielectric Relaxation Observed for Ba0.5Sr0.5TiO3 Thin-Film CapacitorJapanese Journal of Applied Physics, 1996
- Qualitative model for the fatigue-free behavior of SrBi2Ta2O9Applied Physics Letters, 1996
- Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitorsJournal of Materials Research, 1994
- Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizationsThin Solid Films, 1993
- Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactionsJournal of Applied Physics, 1993
- Base electrodes for high dielectric constant oxide materials in silicon technologyJournal of Materials Research, 1992
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structuresApplied Physics Letters, 1991
- Reactively sputtered TiN as a diffusion barrier between Cu and SiJournal of Applied Physics, 1990