Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structures
- 4 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 469-471
- https://doi.org/10.1063/1.104610
Abstract
The role of oxygen has been found to be very significant in the diffusion of Cu in Cu/TiNx/Al and Cu/TiNxOy/Al thin film structures. While no interdiffusion takes place in the Cu/TiNxOy/Al structure up to 575 °C, a substantial interdiffusion, with Cu and Al moving in opposite directions, has been found in the Cu/TiNx/Al structure below 425 °C. Both Cu/TiNx/Si and Cu/TiNxOy/Si systems have been found to be stable for temperatures below 600 °C, with TiNx degrading before TiNxOy above this temperatures. Nuclear resonances, 16O(α,α)16O (3.052 MeV) and 14N(α,α)14N (3.593 MeV), for oxygen and nitrogen respectively, were used to determine the concentration of oxygen and the stoichiometry of the titanium nitride films.Keywords
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