Oxygen in titanium nitride diffusion barriers
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 471-473
- https://doi.org/10.1063/1.96151
Abstract
Oxygen has been found to play a dominant role in TiN barrier performance between Si(100) and Al. When TiN is exposed to air prior to Al deposition, interdiffusion of the Si/TiN/Al structure is not observed until heating to a temperature of 560 °C, whereas the barrier fails already below 400 °C when Al is deposited in situ onto TiN.Keywords
This publication has 19 references indexed in Scilit:
- TiN as a diffusion barrier between CoSi2 or PtSi and aluminumThin Solid Films, 1983
- Degradation Mechanism in Si-Doped Al/Si Contacts and an Extremely Stable Metallization SystemIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1983
- Interfacial reactions between aluminum and transition-metal nitride and carbide filmsJournal of Applied Physics, 1982
- Contact resistivities of sputtered TiN and TiTiN metallizations on solar-cell-type-siliconSolar Energy, 1981
- Diffusion barriers in layered contact structuresJournal of Vacuum Science and Technology, 1981
- Thermal stability of titanium nitride for shallow junction solar cell contactsJournal of Applied Physics, 1981
- High-temperature contact structures for silicon semiconductor devicesApplied Physics Letters, 1980
- Investigation of titanium—nitride layers for solar-cell contactsIEEE Transactions on Electron Devices, 1980
- TiN as a diffusion barrier in the Ti-Pt-Au beam-lead metal systemThin Solid Films, 1979
- Diffusion barriers in thin filmsThin Solid Films, 1978