Degradation Mechanism in Si-Doped Al/Si Contacts and an Extremely Stable Metallization System
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 6 (2) , 159-162
- https://doi.org/10.1109/tchmt.1983.1136163
Abstract
The resistance increase of diffused resistors with Si-doped Ai metallization was investigated under high current density. This degradation was caused by void formation at the Si-doped Al/Si interface. The resistance increase of the diffused resistor corresponded to the resistor length expanded by this void formation. The void formation resulted from a combination of Al and Si electromigration and diffusion of Si into the Al layer. This mechanism was confirmed by analyses of Cu-doped AI, which had excellent resistance to Al electromigration, and the AI/TiN/Ti metallization system, which should have a complete barrier effect against Si diffusion into Al. Based on these degradation analyses, an extremely stable Cu-doped Ai/TiN/Ti metallization system has been proposed for high current density applications..Keywords
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