Surface-induced perturbation ofLVVAuger spectra
- 18 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (12) , 1304-1306
- https://doi.org/10.1103/physrevlett.63.1304
Abstract
Measurements of LVV Auger-electron spectra from a Si(111) surface before and after Ge deposition reveal that atoms at the surface have a qualitatively different Auger line shape than atoms in the bulk. In particular, the redistribution of electron density at the Si(111) surface enhances the ratio of pp to sp contributions to the LVV line shape. This surface effect is expected to be a general property of LVV spectra from all surfaces, which must be considered when comparing theory to experimental data.Keywords
This publication has 10 references indexed in Scilit:
- Normal Displacements on a Reconstructed Silicon (111) Surface: An X-Ray-Standing-Wave StudyPhysical Review Letters, 1986
- Geometrical Structures of the Ge/Si(111) Interface and the Si(111) (7×7) SurfacePhysical Review Letters, 1986
- Measurement of the silicon (111) surface contractionPhysical Review Letters, 1986
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- EditorialSurface and Interface Analysis, 1979
- Auger-Electron Spectroscopy as a Local Probe of Atomic Charge: SiPhysical Review Letters, 1978
- Correction of distortions in spectral line profiles: Applications to electron spectroscopiesJournal of Applied Physics, 1976
- Absence of plasmon-gain satellites in the Auger spectrum of siliconSolid State Communications, 1973
- Inelastic effects in Auger electron spectroscopySurface Science, 1970
- A simple model for the dependence of Auger intensities on specimen thicknessSurface Science, 1969