Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
- 1 June 1999
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 25 (6) , 462-465
- https://doi.org/10.1134/1.1262517
Abstract
Lasing is discovered in the direction perpendicular to the surface in quantum-size InGaN/GaN multilayer heterostructures grown by vapor-phase epitaxy. At high excitation densities one of the modes inKeywords
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