Selectivity in copper chemical vapor deposition
- 30 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (13) , 1585-1587
- https://doi.org/10.1063/1.107259
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Mechanisms of copper chemical vapor depositionApplied Physics Letters, 1992
- Chemical vapor deposition of copper from 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonateApplied Physics Letters, 1991
- Surface mechanisms in aluminum chemical vapor depositionJournal of Vacuum Science & Technology A, 1991
- Selective low‐temperature chemical vapor deposition of copper from (hexafluoroacetylacetonato)copper(I)trimethylphosphine, (hfa)CuP(Me)3Advanced Materials, 1991
- Vapor phase hydrocarbon removal for Si processingApplied Physics Letters, 1990
- Comparison of the selective adsorption and reactivity behavior of WF6 and TaF5 on SiO2 and polyimide surfacesApplied Physics Letters, 1990
- X-ray photoelectron spectroscopy and ellipsometry studies of the electrochemically controlled adsorption of benzotriazole on copper surfacesJournal of Vacuum Science & Technology A, 1990
- Selective and stoichiometric reaction of copper dipivaloylmethanate [Cu(DPM)2] with surface hydroxyls on SiO2Applied Physics Letters, 1990
- Mechanism of surface selectivity in aluminum chemical vapor depositionJournal of Vacuum Science & Technology B, 1990
- XPS and XAES studies of transient enhancement of Cu1 at CuO surfaces during vacuum outgassingApplications of Surface Science, 1983