Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas
- 31 March 1998
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 41-42, 411-414
- https://doi.org/10.1016/s0167-9317(98)00095-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gasesMicroelectronic Engineering, 1995
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980