Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases
- 1 May 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (3) , 640-645
- https://doi.org/10.1116/1.589306
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Anisotropic Reactive Ion Etching of Silicon Using SF 6 / O 2 / CHF 3 Gas MixturesJournal of the Electrochemical Society, 1995
- Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gasesMicroelectronic Engineering, 1995
- Visible luminescence from one- and two-dimensional silicon structures produced by conventional lithographic and reactive ion etching techniquesApplied Physics Letters, 1995
- Quarter-micron lithography with a wet-silylated and dry-developed commercial photoresistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Reactive ion etching mechanism study on Si/GexSi1−xMicroelectronic Engineering, 1994
- Highly anisotropic selective reactive ion etching of deep trenches in siliconMicroelectronic Engineering, 1994
- Langmuir Probe Measurements and Characterization of Silicon Etching in SF 6 / O 2 DischargesJournal of the Electrochemical Society, 1992
- Effects of RF Bias on Remote Microwave Plasma Assisted Etching of Silicon in SF 6Journal of the Electrochemical Society, 1991
- Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas AdditivesJournal of the Electrochemical Society, 1987