Characterization of rf-sputtered SnOx thin films by electron microscopy, Hall-effect measurement, and Mössbauer spectrometry

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Abstract
SnOx films, made by reactive rf magnetron sputtering onto unheated glass, were studied by electron microscopy, Hall-effect measurements, and Mössbauer spectrometry. Transmission electron microscopy showed that the films were polycrystalline with a grain size of ∼15 nm. Hall-effect measurements gave a sharp resistivity minimum (down to 2.8×10−3 Ω cm) and electron concentration maximum (up to 1.2×1020 cm−3 ) at a specific O2/Ar gas-flow ratio during sputtering. Mössbauer spectrometry indicated that the most conducting films only consisted of the SnO2 phase, and that a SnO phase appeared at low O2/Ar ratio where it lowered the conductivity.