Correlation of interface chemistry to electrical properties of metal contacts on diamond

This publication has 31 references indexed in Scilit:

• A review of the electrical characteristics of metal contacts on diamond
  Thin Solid Films, 1992
• Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface
  Applied Physics Letters, 1991
• A thermally activated solid state reaction process for fabricating ohmic contacts to semiconducting diamond
  Journal of Applied Physics, 1990
• The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film
  IEEE Electron Device Letters, 1990
• Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
  Japanese Journal of Applied Physics, 1989
• Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces
  Applied Physics Letters, 1989
• Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film
  Japanese Journal of Applied Physics, 1989
• Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
  Materials Science and Engineering: B, 1988
• The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamonds
  Solid-State Electronics, 1973
• Rectification, Photoconductivity, and Photovoltaic Effect in Semiconducting Diamond
  Physical Review B, 1958