Electrical and Optical Properties of CuInSe 2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman Method

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Abstract
Single crystals of CuInSe2 have been prepared by the three-temperature-horizontal Bridgman method. The crystals prepared under pressure higher than 10 Torr show p-type conduction and have a single phase, while those prepared under lower pressure show n-type conduction and contain a CuIn alloy phase. The crystals prepared under Se vapor pressure of 10 Torr have the largest Hall mobility and the smallest carrier concentration of all p-type crystals. The band tail spreads towards the low-energy side with increasing Se vapor pressure. It is considered that the p-type crystals have the acceptor level of ∼40 meV due to V Cu, and the donor level due to In Cu for Se vapor pressures higher than 25 Torr or due to V Se for Se vapor pressure of 10 Torr.