Channel hot-carrier induced oxide charge trapping in NMOSFET'S

This publication has 6 references indexed in Scilit:

• A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions
  IEEE Electron Device Letters, 1991
• Evidence of acceptor-like oxide defects created by hot-carrier injection in n-MOSFET's: a charge-pumping study
  IEEE Electron Device Letters, 1991
• The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
  IEEE Transactions on Electron Devices, 1990
• Hot-carrier effects in n-channel MOS transistors under alternating stress conditions
  IEEE Electron Device Letters, 1988
• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
  IEEE Transactions on Electron Devices, 1986