Anomalous diffusion of nitrogen in nitrogen-implanted silicon
- 1 May 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (18) , 1793-1795
- https://doi.org/10.1063/1.101266
Abstract
A secondary-ion mass spectrometry analysis of the coimplantation of nitrogen, carbon, and oxygen into float-zone silicon followed by rapid thermal annealing for 10 s at different temperatures is used to study the anomalous diffusion behavior of nitrogen in silicon. The results may be only partially explained by a model of paired nitrogen atom diffusion. The complexity of the diffusion of nitrogen in ion-implanted samples, with and without coimplants, and the expectation that the nitrogen after annealing may be in many different forms, suggest that studies which use nitrogen implantation for basic understanding of nitrogen-related defects may be misleading.Keywords
This publication has 3 references indexed in Scilit:
- Diffusion coefficient of a pair of nitrogen atoms in float-zone siliconApplied Physics Letters, 1988
- Infrared absorption band for substitutional nitrogen in siliconApplied Physics Letters, 1985
- Nitrogen−implanted silicon. I. Damage annealing and lattice locationJournal of Applied Physics, 1975