Low-temperature silicon nitride: a promising dielectric in semiconductor technology
- 15 September 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 216 (2) , 268-273
- https://doi.org/10.1016/0040-6090(92)90848-6
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Characterization of Oxygen‐Doped, Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1988
- Stress-induced grain boundary fractures in Al–Si interconnectsJournal of Vacuum Science & Technology B, 1987
- Effects of Processing on Characteristics of 10–15 nm Thermally Grown SiO2 FilmsJournal of the Electrochemical Society, 1986
- Suppression of aluminum hillock growth by overlayers of silicon dioxide chemically-vapor-deposited at low temperatureJournal of Vacuum Science & Technology B, 1986
- Elimination of hillocks on Al-Si metallization by fast-heat-pulse alloyingApplied Physics Letters, 1984
- A Flexible Multilayer Resist System Using Low Temperature Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1984
- A method for eliminating hillocks in integrated-circuit metallizationsJournal of Vacuum Science & Technology B, 1984
- Characterization of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1983
- The mechanism of N-H bond decomposition in silicon nitride filmsThin Solid Films, 1980
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973