Elimination of hillocks on Al-Si metallization by fast-heat-pulse alloying
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 470-472
- https://doi.org/10.1063/1.95219
Abstract
Alloying of Al-1% Si integrated-circuit metallization by 5-s heat pulses at temperatures ranging from 490 to 540 °C was compared to standard 30-min furnace alloying at 425 °C. Hillocks were present on all furnace-alloyed samples, but were absent from all heat-pulse-alloyed samples. (Al-Si)/n+Si contact resistances equivalent to those obtained with furnace alloying were obtained for heat-pulse temperatures ranging from 505 to 525 °C. Diode leakage characteristics equal to those obtained with furnace alloying were obtained for heat-pulse temperatures up to 520 °C. Effective radiation-damage annealing was accomplished by a heat pulse in forming gas at 500 °C.Keywords
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