Variations of the silicon network of amorphous silicon studied by Raman spectroscopy
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 399-402
- https://doi.org/10.1016/0022-3093(87)90093-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate ConditionsJapanese Journal of Applied Physics, 1985
- Raman Study on the Silicon Network of Hydrogenated Amorphous Silicon Films Deposited by a Glow DischargeJapanese Journal of Applied Physics, 1985
- Order parameters in a-Si systemsSolid State Communications, 1983
- Variable structural order in amorphous siliconPhysical Review B, 1982
- Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow dischargeSolid State Communications, 1982