Er-doped edge emitting devices with a SiGe waveguide

This publication has 11 references indexed in Scilit:

• Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance
  MRS Bulletin, 1998
• Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
  Applied Physics Letters, 1997
• Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
  Applied Physics Letters, 1997
• Strong luminescence from erbium in Si/Si _{1– x} Ge _x /Siquantum wellstructures
  Electronics Letters, 1997
• Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxy
  Applied Physics Letters, 1996
• Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode
  Applied Physics Letters, 1994
• Room-temperature electroluminescence from Er-doped crystalline Si
  Applied Physics Letters, 1994
• Recombination processes in erbium-doped MBE silicon
  Semiconductor Science and Technology, 1993
• Optical waveguiding in Si/Si1−xGex/Si heterostructures
  Journal of Applied Physics, 1991
• Waveguided electro-optical intensity modulation in a Si/Ge _x Si _1−x /Si heterojunction bipolar transistor
  Electronics Letters, 1990