Optical waveguiding in Si/Si1−xGex/Si heterostructures
- 15 September 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3370-3372
- https://doi.org/10.1063/1.349276
Abstract
Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1−xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si1−xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 Å thick beneath a 2‐μm Si cap. The observed TE0 mode profile agreed with theory.This publication has 8 references indexed in Scilit:
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