Confinement of Threading Dislocations in Simox with a GeSi Strained Layer

This publication has 9 references indexed in Scilit:

• Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps
  Applied Physics Letters, 1989
• Back Channel Degradation and Device Material Improvement by Ge Implantation
  MRS Proceedings, 1989
• The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing
  Journal of Applied Physics, 1988
• Low-Defect, High-Quality Simox Produced By Multiple Oxygen Implantation with Substoichiometric Total Dose
  MRS Proceedings, 1988
• Dislocation Reduction on Simox Substrates by Using Multiple Implants
  MRS Proceedings, 1987
• Microstructure of high-temperature annealed buried oxide silicon-on-insulator
  Applied Physics Letters, 1986
• High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing
  Applied Physics Letters, 1986
• SOI Technologies: Device Applications and Future Prospects
  MRS Proceedings, 1984
• SOS Device radiation effects and hardening
  IEEE Transactions on Electron Devices, 1978