Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7R)
- https://doi.org/10.1143/jjap.25.1040
Abstract
Short channel MOSFETs with a channel length of 0.38 µm were experimentally investigated and analyzed using a two-dimensional device simulation. FET characteristics can be explained well when the effect of the normal field on the electron mobility (Cooper-Nelson formulas) in the inversion layers is taken into account. The normal field dependence of the electron mobility is interpreted in terms of a two-dimensional quantization of the electrons.Keywords
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