Cr-Si-O film with a high chromium concentration for strain gauge
- 11 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (11) , 1080-1081
- https://doi.org/10.1063/1.101710
Abstract
We prepared a Cr-Si-O film by co-sputter deposition and evaluated the properties with a view to applying to a strain gauge. It was found that the maximum gauge factor of 8.7 was obtained in the 200-nm-thick film at the composition of Cr-1 at. % Si-19 at. % O. In addition, the temperature coefficient of resistance of the film was 8 ppm/°C in the temperature range of 25–120 °C and the fractional change in resistance after annealing was less than ±0.1% up to 400 °C.Keywords
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