Hot-carrier degradation in ultra-thin fully-depleted accumulation-mode SIMOX n-MOSFET's
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 407-410
- https://doi.org/10.1016/0167-9317(93)90199-f
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Investigation of the influence of the film thickness in accumulation-mode fully-depleted SIMOX MOSFET'sMicroelectronic Engineering, 1992
- Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETSIEEE Electron Device Letters, 1991
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983