Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1549-1554
- https://doi.org/10.1116/1.589937
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Selectively grown vertical Si- p MOS transistorwith short channel lengthsElectronics Letters, 1996
- The equilibrium shape of siliconSurface Science, 1995
- Si/Si1-xGexdots grown by selective epitaxySemiconductor Science and Technology, 1994
- Equilibrium shape of SiPhysical Review Letters, 1993
- Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental resultsJournal of Crystal Growth, 1989
- New approach to the high quality epitaxial growth of lattice-mismatched materialsApplied Physics Letters, 1986
- Submicron Highly Doped Silicon Epitaxial Layers Grown by LpvpeMRS Proceedings, 1986
- LEED studies of clean high Miller index surfaces of siliconSurface Science, 1981
- Selective Silicon Epitaxy and Orientation Dependence of GrowthJournal of the Electrochemical Society, 1973
- Vacuum Thermal Etching of Germanium and Silicon SurfacesJournal of the Electrochemical Society, 1967