Fabrication and lasing characteristics of 1.3-μm InGaAsP multiquantum-well lasers

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Abstract
This paper reports the fabrication and lasing characteristics of 1.3-μm InGaAsP multiquantum-well (MQW) buried heterostructure (BH) lasers grown by liquid-phase epitaxy (LPE) technique. The MQW active region consists of five InGaAsP well layers (λg=1.3-μm, Lz∼200 Å and InGaAsP barrier layers (λg=1.1 μm, d∼400–600 Å). These lasers have threshold currents of 15–20 mA at 25 °C, external quantum efficiencies of 50% at 25 °C, and T0 values of 130–145 °K in the temperature range of less than 300 °K. The beam divergences perpendicular and parallel to the junction plane were in the narrow range of 10–13°. Furthermore, the polarization-dependent gain-current relationship between the TE and TM mode of InGaAsP MQW lasers has been investigated in detail for the first time.