Quenched-in deep levels in boron-doped silicon
- 31 July 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (1) , 93-94
- https://doi.org/10.1016/0038-1098(81)91054-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A quenched-in defect in boron-doped siliconJournal of Applied Physics, 1977
- EPR of a thermally induced defect in siliconApplied Physics Letters, 1977
- Thermally induced defects in n-type and p-type siliconPhysica Status Solidi (a), 1973
- Donor-type generation-recombination centers in diffused silicon devicesRadiation Effects, 1970
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967