Defect Levels in Thermally-Quenched Silicon Crystals
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8R)
- https://doi.org/10.1143/jjap.24.1018
Abstract
The energy levels due to quenched-in defects in thermally-treated p-type silicon are analyzed by capacitance transient spectroscopy (DLTS). The quenching rate is found to affect the introduction of several kinds of hole trap, but neither the oxygen concentration nor the dislocation density in the starting materials influences the formation of defects. A hole trap at E v+0.32 eV, which is not correlated with transition metal impurities such as iron or copper, is found to be introduced efficiently in the rapidly-quenched crystals.Keywords
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