Modal analysis of separate-confinement heterojunction lasers with inhomogeneous cladding layers
- 1 May 1983
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 8 (5) , 283-285
- https://doi.org/10.1364/ol.8.000283
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 9 references indexed in Scilit:
- Diode laser threshold current density and lasing wavelength as functions of active region thicknessApplied Physics Letters, 1983
- Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p -type dopantElectronics Letters, 1982
- Continuous wave high-power, high-temperature semiconductor laser phase-locked arraysApplied Physics Letters, 1982
- Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPEElectronics Letters, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981
- Ambipolar transport in double heterostructure injection lasersIEEE Electron Device Letters, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974