Extraction method for polycrystalline TFT above and below threshold model parameters
- 31 December 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (12) , 2295-2300
- https://doi.org/10.1016/s0038-1101(02)00186-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Unified extraction method for amorphous and polycrystalline TFT above threshold model parametersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regionsSolid-State Electronics, 2001
- Unified model for short-channel poly-Si TFTsSolid-State Electronics, 1999