Plasma-cracked supply of group V and group VI elements for low temperature epitaxy
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 157-161
- https://doi.org/10.1016/0022-0248(94)90401-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Plasma-Assisted Epitaxial Growth of P-Type ZnSe in Nitrogen-Based PlasmaJapanese Journal of Applied Physics, 1993
- Plasma-assisted epitaxy of InAs layers on GaAsJournal of Crystal Growth, 1991
- Low-temperature growth of ZnSe by molecular beam epitaxy using cracked seleniumApplied Physics Letters, 1990
- Low-temperature growth of ZnSe by molecular beam epitaxy using cracked seleniumApplied Physics Letters, 1990
- Molecular-beam epitaxial growth and transport properties of InAs epilayersJournal of Applied Physics, 1989
- The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSbJapanese Journal of Applied Physics, 1989
- Plasma-assisted epitaxial growth of GaAs and GaSb layers in hydrogen plasmaIEEE Transactions on Electron Devices, 1984
- Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2 sourceJournal of Applied Physics, 1984
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980