Selective epitaxial growth of Ge and SiGe using Si2H6 gas and Ge solid source molecular beam epitaxy
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 969-973
- https://doi.org/10.1016/0022-0248(95)80084-p
Abstract
No abstract availableKeywords
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