Interface trap effect on gate induced drain leakage current in submicron N-MOSFET's

This publication has 9 references indexed in Scilit:

• Deep-submicrometer large-angle-tilt implanted drain (LATID) technology
  IEEE Transactions on Electron Devices, 1992
• Hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs
  IEEE Electron Device Letters, 1991
• Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Leakage current degradation in n-MOSFETs due to hot-electron stress
  IEEE Electron Device Letters, 1988
• Tunneling leakage in Ge preamorphized shallow junctions
  IEEE Transactions on Electron Devices, 1988
• Subbreakdown drain leakage current in MOSFET
  IEEE Electron Device Letters, 1987
• The impact of gate-induced drain leakage current on MOSFET scaling
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Hot-carrier induced drain leakage current in n-channel MOSFET
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Anomalous leakage current in LPCVD PolySilicon MOSFET's
  IEEE Transactions on Electron Devices, 1985