A computer simulation study of potential enhanced doping mechanism in molecular beam epitaxy
- 1 October 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 72 (1) , 13-16
- https://doi.org/10.1016/0038-1098(89)90870-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Are in-growth surface reactions during MBE controlled by a “Quasi-Gas transition layer”?Crystal Research and Technology, 1987
- Silicon molecular beam epitaxy: 1984–1986Journal of Crystal Growth, 1987
- The sputter behaviour of vanadium silicide studied by a computer simulation techniqueSolid State Communications, 1986
- Doping by Secondary ImplantationJournal of the Electrochemical Society, 1986
- Potential‐Enhanced Doping of Si Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1985
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Enhanced sticking coefficients and improved profile control using boron and antimony as coevaporated dopants in Si–MBEJournal of Vacuum Science & Technology B, 1985
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Klassische Runge-Kutta-Nyström-Formeln mit Schrittweiten-Kontrolle für Differentialgleichungen $$\ddot x = f(t, x)$$Computing, 1972
- ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMSApplied Physics Letters, 1969