Defect formation during zinc diffusion into GaAs
- 30 March 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 13 (2) , 137-151
- https://doi.org/10.1016/0921-5107(92)90155-3
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Diffusion mechanism of zinc and beryllium in gallium arsenideJournal of Applied Physics, 1991
- Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materialsCritical Reviews in Solid State and Materials Sciences, 1991
- Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of DislocationsDefect and Diffusion Forum, 1991
- Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and modelJournal of Applied Physics, 1988
- Diffusion of zinc in gallium arsenide: A new modelJournal of Applied Physics, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Anomalous diffusion profiles of zinc in GaAsJournal of Materials Science, 1972
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Diffusion of zinc in gallium arsenideJournal of Physics and Chemistry of Solids, 1960
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956