Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model
- 15 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (4) , 1052-1059
- https://doi.org/10.1063/1.340006
Abstract
We have characterized the diffusion of Zn into GaAs from the organometallic sources diethylzinc and trimethylarsenic. This method produces surface hole concentrations in excess of 1020 cm−3 with good control of junction depths as shallow as 0.1 μm. Smooth surface morphology is retained. The profile shape is much more complex than the accepted interstitial-substitutional Zn-diffusion model would predict. To explain the observed profiles, a new model for Zn diffusion is proposed and implemented in a computer simulation.This publication has 8 references indexed in Scilit:
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