Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 503-508
- https://doi.org/10.1016/s0022-0248(00)00752-1
Abstract
No abstract availableKeywords
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