230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
- 12 September 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (10) , 2025-2034
- https://doi.org/10.1109/jssc.2005.852846
Abstract
This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.Keywords
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