Interface density of neutral dangling bonds in a-Si:H/a-SiNx:H superlattices
- 31 July 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 55 (2) , 105-107
- https://doi.org/10.1016/0038-1098(85)90257-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor HeterojunctionsPhysical Review Letters, 1984
- Field-effect phenomena in hydrogenated amorphous silicon photoreceptorsJournal of Applied Physics, 1984
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Dual-gate a—Si:H thin film transistorsIEEE Electron Device Letters, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Direct Measurement of the Bulk Density of Gap States in-Type Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980