Dual-gate a—Si:H thin film transistors

1 December 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (12) , 357-359
https://doi.org/10.1109/edl.1982.25599

Abstract

Dual-gate accumulation mode thin film transistors have been fabricated for the first time in a-Si:H on bulk glass substrates. The devices display exceptionally high performance, as compared to previously reported single-gate a-Si:H transistors. For a channel length of 10 µm and width of 168 µm, drain currents in the range of 5-10 µA were obtained for gate biases of 15 V in both of the two conducting channels induced in the a-Si:H layer. The drain current of the TFT operating in the dual-gate mode was found to be larger than the arithmetic sum of the drain currents through the two individual channels obtained from single-mode operation. A significant difference in dc stability between the two channels was observed. The use of the dual-gate TFT as a diagnostic structure for studying interface properties and contact effects has been demonstrated.

Keywords

This publication has 9 references indexed in Scilit:

Thin-film transistors on a-Si:H
IEEE Transactions on Electron Devices, 1982
Application of amorphous silicon field effect transistors in integrated circuits
Applied Physics A, 1981
VIA-7 amorphous silicon FET with Schottky contacts
IEEE Transactions on Electron Devices, 1981
Amorphous silicon-silicon nitride thin-film transistors
Applied Physics Letters, 1981
Application of amorphous silicon field effect transistors in addressable liquid crystal display panels
Applied Physics A, 1981
High-performance amorphous-silicon field-effect transistors
Journal of Applied Physics, 1980
Amorphous-silicon thin-film metal-oxide-semiconductor transistors
Applied Physics Letters, 1980
Amorphous-silicon field-effect device and possible application
Electronics Letters, 1979
(Invited) Characterization of Plasma-Deposited Amorphous Si: H Thin Films
Japanese Journal of Applied Physics, 1979