Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVDMRS Proceedings, 1993
- Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors –The Influence of the Amorphous Silicon Deposition Temperature–Japanese Journal of Applied Physics, 1991
- Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping TechniqueJapanese Journal of Applied Physics, 1991
- Technical developments and trends in a-Si TFT-LCDsJournal of Non-Crystalline Solids, 1989
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic FieldJapanese Journal of Applied Physics, 1988
- Amorphous-silicon TFT array for LCD addressingElectronics Letters, 1982
- The role of hydrogen in heavily doped amorphous siliconPhilosophical Magazine Part B, 1982
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980